K. Shubhakar: search on Z-Library

The world's largest scientific articles store. 70,000,000+ articles for free.

1

Impact of Carbon Doping on Polysilicon Grain Size Distribution and Yield Enhancement for 40 nm Embedded Non-Volatile Memory Technology

Luo, Laiqiang, Shubhakar, Kalya, Mei, Sen, Raghavan, Nagarajan, Liu, Binghai, Huang, Jing Yan, Liu, Youming, Zheng, Han, Zhang, Fan, Shum, Danny, Pey, K.L.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2018

Language:

english

File:

PDF, 939 KB

english, 2018

2

[IEEE 2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Suzhou, China (2013.07.15-2013.07.19)] Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Real-time analysis of ultra-thin gate dielectric breakdown and recovery - A reality

Pey, K.L., Raghavan, N., Liu, W. H., Wu, X., Shubhakar, K., Bosman, M.

Year:

2013

Language:

english

File:

PDF, 1.57 MB

english, 2013

3

Grain boundary assisted degradation and breakdown study in cerium oxide gate dielectric using scanning tunneling microscopy

Shubhakar, K., Pey, K. L., Kushvaha, S. S., O’Shea, S. J., Raghavan, N., Bosman, M., Kouda, M., Kakushima, K., Iwai, H.

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 944 KB

english, 2011

4

[IEEE 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2010) - Singapore, Singapore (2010.07.5-2010.07.9)] 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits - An overview of physical analysis of nanosize conductive path in ultrathin SiON and high-к gate dielectrics in nanoelectronic devices

Pey, K. L., Wu, X., Liu, W. H., Li, X., Raghavan, N., Shubhakar, K., Bosman, M.

Year:

2010

Language:

english

File:

PDF, 2.14 MB

english, 2010

5

[IEEE 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2012) - Singapore, Singapore (2012.07.2-2012.07.6)] 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits - Nanoscale physical analysis of localized breakdown events in HfO2/SiOX dielectric stacks: A correlation study of STM induced BD with C-AFM and TEM

Shubhakar, K., Pey, K. L., Bosman, M., Thamankar, R., Kushvaha, S. S., Loke, Y. C., Wang, Z. R., Raghavan, N., Wu, X., O'Shea, S. J.

Year:

2012

Language:

english

File:

PDF, 2.36 MB

english, 2012

6

[IEEE 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Hsinchu (2015.6.29-2015.7.2)] 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits - Localized Random Telegraphic Noise Study in HfO2 dielectric stacks using Scanning Tunneling Microscopy — Analysis of process and stress-induced traps

Ranjan, A., Shubhakar, K., Raghavan, N., Thamankar, R., Bosman, M., O'Shea, S. J., Pey, K. L.

Year:

2015

Language:

english

File:

PDF, 796 KB

english, 2015

7

[IEEE 2020 8th International Conference on Reliability, Infocom Technologies and Optimization (Trends and Future Directions) (ICRITO) - Noida, India (2020.6.4-2020.6.5)] 2020 8th International Conference on Reliability, Infocom Technologies and Optimization (Trends and Future Directions) (ICRITO) - Design and Implementation of ASH (Advance Smart Healthcare) System: A Review Model

Sohelrana, Khan, Khan, Md Faizan, Shubhakar, P., Khan, Ahmed Shair, Khan, Muneeb Ahmed

Year:

2020

File:

PDF, 268 KB

2020

8

Impact of local structural and electrical properties of grain boundaries in polycrystalline HfO2 on reliability of SiOx interfacial layer

Shubhakar, K., Raghavan, N., Kushvaha, S.S., Bosman, M., Wang, Z.R., O’Shea, S.J., Pey, K.L.

Journal:

Microelectronics Reliability

Year:

2014

Language:

english

File:

PDF, 2.30 MB

english, 2014

9

Effects of thermal annealing on the charge localization characteristics of HfO2/Au/HfO2 stack

Feng, Xuan, Dong, Shurong, Wong, Hei, Yu, Danqun, Pey, K.L., Shubhakar, K., Lau, W.S.

Journal:

Microelectronics Reliability

Year:

2016

Language:

english

File:

PDF, 622 KB

english, 2016

10

[IEEE 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA 2010) - Singapore, Singapore (2010.07.5-2010.07.9)] 2010 17th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits - Localized degradation and breakdown study of cerium-oxide high-к gate dielectric material using scanning tunneling microscopy

Shubhakar, K., Pey, K.L., Kushvaha, S.S., O'Shea, S.J., Bosman, M., Kouda, M., Kakushima, K., Iwai, H.

Year:

2010

Language:

english

File:

PDF, 1.02 MB

english, 2010

11

High-κ dielectric breakdown in nanoscale logic devices – Scientific insight and technology impact

Raghavan, Nagarajan, Pey, Kin Leong, Shubhakar, Kalya

Journal:

Microelectronics Reliability

Year:

2014

Language:

english

File:

PDF, 5.27 MB

english, 2014

12

Safety and Pharmacokinetics of Ganitumab (AMG 479) Combined with Sorafenib, Panitumumab, Erlotinib, or Gemcitabine in Patients with Advanced Solid Tumors

Rosen, L. S., Puzanov, I., Friberg, G., Chan, E., Hwang, Y. C., Deng, H., Gilbert, J., Mahalingam, D., McCaffery, I., Michael, S. A., Mita, A. C., Mita, M. M., Mulay, M., Shubhakar, P., Zhu, M., Saran

Journal:

Clinical Cancer Research

Year:

2012

Language:

english

File:

PDF, 278 KB

english, 2012

13

[IEEE 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Hsinchu (2015.6.29-2015.7.2)] 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits - SRAM VMIN yield challenge in 40nm embedded NVM process

Luo, L. Q., Wang, D. X., Zhang, F., Tan, J. B., Chow, Y. T., Kong, Y. J., Huang, J. Y., Liu, Y. M., Oh, M., Balan, H., Khoo, P., Chen, C. Q., Liu, B. H., Shum, D., Shubhakar, K., Pey, K. L.

Year:

2015

Language:

english

File:

PDF, 381 KB

english, 2015

14

Physical analysis of breakdown in high-κ/metal gate stacks using TEM/EELS and STM for reliability enhancement (invited)

Kin Leong Pey, Nagarajan Raghavan, Xing Wu, Wenhu Liu, Xiang Li, Michel Bosman, Kalya Shubhakar, Zin Zar Lwin, Yining Chen, Hailang Qin, Thomas Kauerauf

Journal:

Microelectronic Engineering

Year:

2011

Language:

english

File:

PDF, 2.19 MB

english, 2011

15

An Optimal Intrusion Detection System using GWO-CSA-DSAE Model

Keserwani, Pankaj Kumar, Govil, Mahesh Chandra, Shubhakar, Emmanuel

Journal:

Cyber-Physical Systems

Year:

2020

File:

PDF, 4.80 MB

2020

16

[IEEE 2016 5th International Symposium on Next-Generation Electronics (ISNE) - Hsinchu, Taiwan (2016.5.4-2016.5.6)] 2016 5th International Symposium on Next-Generation Electronics (ISNE) - Observation of resistive switching by physical analysis techniques

Pey, K. L., Mei, S., Ranjan, A., Raghavan, N., Shubhakar, K., Thamankar, R, Bosman, M., O'Shea, S. J.

Year:

2016

Language:

english

File:

PDF, 1.13 MB

english, 2016

17

[IEEE 2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) - Hong Kong, Hong Kong (2013.06.3-2013.06.5)] 2013 IEEE International Conference of Electron Devices and Solid-state Circuits - Impact of local variations in high-k dielectric on breakdown and recovery characteristics of advanced gate stacks

Pey, K. L., Shubhakar, K., Raghavan, N., Wu, X., Bosman, M.

Year:

2013

Language:

english

File:

PDF, 1.34 MB

english, 2013

18

Leakage current and structural analysis of annealed HfO2/La2O3 and CeO2/La2O3 dielectric stacks: A nanoscopic study

Shubhakar, Kalya, Pey, Kin Leong, Bosman, Michel, Kushvaha, Sunil Singh, O'Shea, Sean Joseph, Kouda, Miyuki, Kakushima, Kuniyuki, Iwai, Hiroshi

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2014

Language:

english

File:

PDF, 2.35 MB

english, 2014

19

An SEM/STM based nanoprobing and TEM study of breakdown locations in HfO2/SiOx dielectric stacks for failure analysis

K. Shubhakar, M. Bosman, O. Neucheva, Y. Loke, N. Raghavan, R. Thamankar, A. Ranjan, S. O'shea, K. Pey

Year:

2015

Language:

english

File:

PDF, 1.64 MB

english, 2015

20

Study of preferential localized degradation and breakdown of HfO2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO2 dielectrics

Shubhakar, Kalya, Pey, Kin Leong, Raghavan, Nagarajan, Kushvaha, Sunil Singh, Bosman, Michel, Wang, Zhongrui, O’Shea, Sean Joseph

Journal:

Microelectronic Engineering

Year:

2013

Language:

english

File:

PDF, 2.56 MB

english, 2013

21

[IEEE 2011 IEEE International Reliability Physics Symposium (IRPS) - Monterey, CA, USA (2011.04.10-2011.04.14)] 2011 International Reliability Physics Symposium - Nanoscale electrical and physical study of polycrystalline high-κ dielectrics and proposed reliability enhancement techniques

Shubhakar, K., Pey, K. L., Kushvaha, S. S., Bosman, M., O'Shea, S. J., Raghavan, N., Kouda, M., Kakushima, K., Wang, Z. R., Yu, H. Y., Iwai, H.

Year:

2011

Language:

english

File:

PDF, 1.40 MB

english, 2011

22

Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO 2 films combining scanning tunneling microscopy and multi-scale simulations

Thamankar, R., Puglisi, F. M., Ranjan, A., Raghavan, N., Shubhakar, K., Molina, J., Larcher, L., Padovani, A., Pavan, P., O'Shea, S. J., Pey, K. L.

Journal:

Journal of Applied Physics

Year:

2017

Language:

english

File:

PDF, 2.35 MB

english, 2017

23

[IEEE 2017 IEEE International Reliability Physics Symposium (IRPS) - Monterey, CA, USA (2017.4.2-2017.4.6)] 2017 IEEE International Reliability Physics Symposium (IRPS) - Nanoscale investigations of soft breakdown events in few layered fluorinated graphene

Ranjan, A., Raghavan, N., Liu, B., O'Shea, S. J., Shubhakar, K., Lai, C. S., Pey, K. L.

Year:

2017

Language:

english

File:

PDF, 1.04 MB

english, 2017

24

[IEEE 2013 Annual Reliability and Maintainability Symposium (RAMS) - Orlando, FL (2013.1.28-2013.1.31)] 2013 Proceedings Annual Reliability and Maintainability Symposium (RAMS) - Monte Carlo evidence for need of improved percolation model for non-weibullian degradation in high-κ dielectrics

Raghavan, N., Shubhakar, K., Kin Leong Pey,

Year:

2013

Language:

english

File:

PDF, 958 KB

english, 2013

25

Random telegraph noise in 2D hexagonal boron nitride dielectric films

Ranjan, A., Puglisi, F. M., Raghavan, N., O'Shea, S. J., Shubhakar, K., Pavan, P., Padovani, A., Larcher, L., Pey, K. L.

Journal:

Applied Physics Letters

Year:

2018

Language:

english

File:

PDF, 2.34 MB

english, 2018

26

Big Data Handling Over Cloud for Internet of Things

Goyal, Tarun, Rathi, Rakesh, Jain, Vinesh Kumar, Pilli, Emmanuel Shubhakar, Mazumdar, Arka Prokash

Journal:

International Journal of Information Technology and Web Engineering

Year:

2018

Language:

english

File:

PDF, 556 KB

english, 2018

27

Transabdominal Impalement: Absence of Visceral or Vascular Injury a Rare Possibility

Rajashekar Mohan, Datta U. Ram, Yellika Suresh Baba, Anil Shetty, Shubhakar Bhandary

Journal:

The Journal of Emergency Medicine

Year:

2011

Language:

english

File:

PDF, 571 KB

english, 2011

28

Modified Percolation Model for Polycrystalline High-$ \kappa$ Gate Stack With Grain Boundary Defects

Raghavan, Nagarajan, Pey, Kin Leong, Shubhakar, Kalya, Bosman, Michel

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 434 KB

english, 2011

29

Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride Films

Ranjan, A., Raghavan, N., O’Shea, S. J., Mei, S., Bosman, M., Shubhakar, K., Pey, K. L.

Journal:

Scientific Reports

Year:

2018

Language:

english

File:

PDF, 5.22 MB

english, 2018

30

[IEEE 2018 IEEE International Reliability Physics Symposium (IRPS) - Burlingame, CA (2018.3.11-2018.3.15)] 2018 IEEE International Reliability Physics Symposium (IRPS) - Mechanism of soft and hard breakdown in hexagonal boron nitride 2D dielectrics

Ranjan, A., Raghavan, N., O'Shea, S.J., Mei, S., Bosman, M., Shubhakar, K., Pey, K.L.

Year:

2018

Language:

english

File:

PDF, 1.18 MB

english, 2018

31

Single vacancy defect spectroscopy on HfO 2 using random telegraph noise signals from scanning tunneling microscopy

Thamankar, R., Raghavan, N., Molina, J., Puglisi, F. M., O'Shea, S. J., Shubhakar, K., Larcher, L., Pavan, P., Padovani, A., Pey, K. L.

Journal:

Journal of Applied Physics

Year:

2016

Language:

english

File:

PDF, 1.76 MB

english, 2016

32

CHACT: Convex Hull Enabled Active Contour Technique for Salient Object Detection

Singh, Maheep, Govil, M. C., Pilli, Emmanuel Shubhakar

Journal:

Year:

2018

Language:

english

File:

PDF, 1.43 MB

english, 2018

33

Analysis of quantum conductance, read disturb and switching statistics in HfO2 RRAM using conductive AFM

Ranjan, A., Raghavan, N., Molina, J., O'Shea, S.J., Shubhakar, K., Pey, K.L.

Journal:

Microelectronics Reliability

Year:

2016

Language:

english

File:

PDF, 1.67 MB

english, 2016

34

[IEEE 2016 International Conference on Advances in Computing, Communication, & Automation (ICACCA) (Spring) - Dehradun, India (2016.4.8-2016.4.9)] 2016 International Conference on Advances in Computing, Communication, & Automation (ICACCA) (Spring) - A comparative analysis of SVM and its stacking with other classification algorithm for intrusion detection

Chand, Nanak, Mishra, Preeti, Krishna, C. Rama, Pilli, Emmanuel Shubhakar, Govil, Mahesh Chandra

Year:

2016

Language:

english

File:

PDF, 115 KB

english, 2016

35

Editorial Board

Raghavan, Nagarajan, Pey, Kin Leong, Shubhakar, Kalya

Journal:

Journal of Dairy Science

Year:

1987

Language:

english

File:

PDF, 99 KB

english, 1987

36

Conductive filament formation at grain boundary locations in polycrystalline HfO2 -based MIM stacks: Computational and physical insight

Shubhakar, K., Mei, S., Bosman, M., Raghavan, N., Ranjan, A., O'Shea, S.J., Pey, K.L.

Journal:

Microelectronics Reliability

Year:

2016

Language:

english

File:

PDF, 1.92 MB

english, 2016

37

3D characterization of hard breakdown in RRAM device

Mei, S., Bosman, M., Shubhakar, K., Raghavan, N., Ming, L., Pey, K.L.

Journal:

Microelectronic Engineering

Year:

2019

Language:

english

File:

PDF, 694 KB

english, 2019

38

[IEEE 2020 IEEE International Reliability Physics Symposium (IRPS) - Dallas, TX, USA (2020.4.28-2020.5.30)] 2020 IEEE International Reliability Physics Symposium (IRPS) - Reliability and Breakdown Study of Erase Gate Oxide in Split-Gate Non-Volatile Memory Device

Luo, L., Shubhakar, K., Mei, S., Raghavan, N., Zhang, F., Shum, D., Pey, K. L.

Year:

2020

File:

PDF, 1.61 MB

2020

39

[IEEE 2010 IEEE International Reliability Physics Symposium - Garden Grove (Anaheim), CA, USA (2010.05.2-2010.05.6)] 2010 IEEE International Reliability Physics Symposium - New insight into the TDDB and breakdown reliability of novel high-к gate dielectric stacks

Pey, K.L., Raghavan, N., Li, X., Liu, W.H., Shubhakar, K., Wu, X., Bosman, M.

Year:

2010

Language:

english

File:

PDF, 2.03 MB

english, 2010

40

Automated High-Throughput Permethylation for Glycosylation Analysis of Biologics Using MALDI-TOF-MS

Shubhakar, Archana, Kozak, Radoslaw P., Reiding, Karli R., Royle, Louise, Spencer, Daniel I. R., Fernandes, Daryl L., Wuhrer, Manfred

Journal:

Analytical Chemistry

Year:

2016

Language:

english

File:

PDF, 1.44 MB

english, 2016

41

Correction: Changes to Serum Sample Tube and Processing Methodology Does Not Cause Inter-Individual Variation in Automated Whole Serum N-Glycan Profiling in Health and Disease

Ventham, Nicholas T., Gardner, Richard A., Kennedy, Nicholas A., Shubhakar, Archana, Kalla, Rahul, Nimmo, Elaine R., Fernandes, Daryl L., Satsangi, Jack, Spencer, Daniel I. R.

Journal:

Year:

2015

Language:

english

File:

PDF, 341 KB

english, 2015

42

High-throughput serum N -glycomics: method comparison and application to study rheumatoid arthritis and pregnancy-associated changes

Reiding, Karli Robert, Bondt, Albert, Hennig, René, Gardner, Richard A., O’Flaherty, Roisin, Trbojević-Akmačić, Irena, Shubhakar, Archana, Hazes, Johanna, Reichl, Udo, Fernandes, Daryl L., Pucic-Bakov

Journal:

Molecular & Cellular Proteomics

Year:

2018

Language:

english

File:

PDF, 1.83 MB

english, 2018

43

[IEEE 2012 IEEE International Reliability Physics Symposium (IRPS) - Anaheim, CA, USA (2012.04.15-2012.04.19)] 2012 IEEE International Reliability Physics Symposium (IRPS) - Role of grain boundary percolative defects and localized trap generation on the reliability statistics of high-κ gate dielectric stacks

Raghavan, N., Pey, K.L., Shubhakar, K., Wu, X., Liu, W.H., Bosman, M.

Year:

2012

Language:

english

File:

PDF, 498 KB

english, 2012

44

High-Throughput Analysis and Automation for Glycomics Studies

Shubhakar, Archana, Reiding, Karli R., Gardner, Richard A., Spencer, Daniel I. R., Fernandes, Daryl L., Wuhrer, Manfred

Journal:

Chromatographia

Year:

2015

Language:

english

File:

PDF, 793 KB

english, 2015

45

[IEEE 2007 International Workshop on Physics of Semiconductor Devices - Mumbai, India (2007.12.16-2007.12.20)] 2007 International Workshop on Physics of Semiconductor Devices - Necessity for quantum mechanical simulation for the future technology nodes

Ray, Biswajit, Shubhakar,, Mahapatra, Santanu

Year:

2007

Language:

english

File:

PDF, 105 KB

english, 2007

46

[IEEE 2019 IEEE International Reliability Physics Symposium (IRPS) - Monterey, CA, USA (2019.3.31-2019.4.4)] 2019 IEEE International Reliability Physics Symposium (IRPS) - Dielectric Breakdown in 2D Layered Hexagonal Boron Nitride — The Knowns and the Unknowns

Pey, K.L., Ranjan, A., Raghavan, N., Shubhakar, K., O'Shea, S.J.

Year:

2019

Language:

english

File:

PDF, 47 KB

english, 2019

47

Mass spectrometry for glycosylation analysis of biopharmaceuticals

Dotz, Viktoria, Haselberg, Rob, Shubhakar, Archana, Kozak, Radoslaw P., Falck, David, Rombouts, Yoann, Reusch, Dietmar, Somsen, Govert W., Fernandes, Daryl L., Wuhrer, Manfred

Journal:

TrAC Trends in Analytical Chemistry

Year:

2015

Language:

english

File:

PDF, 663 KB

english, 2015

48

[IEEE 2016 IEEE International Reliability Physics Symposium (IRPS) - Pasadena, CA, USA (2016.4.17-2016.4.21)] 2016 IEEE International Reliability Physics Symposium (IRPS) - Multiphysics based 3D percolation framework model for multi-stage degradation and breakdown in high-κ — Interfacial layer stacks

Mei, S., Raghavan, N., Shubhakar, K., Bosman, M., Pey, K. L.

Year:

2016

Language:

english

File:

PDF, 1.71 MB

english, 2016

49

Pore characterization of PM Mgâ0.6Ca alloy and its degradation behavior under physiological conditions

Nidadavolu, Eshwara Phani Shubhakar, KrÃ¼ger, Diana, Zeller-Plumhoff, Berit, Tolnai, Domonkos, Wiese, BjÃ¶rn, Feyerabend, Frank, Ebel, Thomas, Willumeit-RÃ¶mer, Regine

Journal:

Journal of Magnesium and Alloys

Year:

2020

File:

PDF, 7.45 MB

2020

50

Towards automation of glycomic profiling of complex biological materials

Shubhakar, Archana, Pang, Poh-Choo, Fernandes, Daryl L., Dell, Anne, Spencer, Daniel I. R., Haslam, Stuart M.

Journal:

Glycoconjugate Journal

Year:

2018

Language:

english

File:

PDF, 2.31 MB

english, 2018

To build up a library is to create a life. It’s never just a random collection of books.

— Carlos María Domínguez

Official channel

Z-Library Desktop Launcher

Z-Library Since 2009 support@1delivery.pm

EnglishРусскийEspañolItalianoελληνικάاللغة العربيةBahasa IndonesiaBahasa Malaysiaहिन्दीDeutschFrançaisPortuguêsУкраїнськаPolski中文繁體中文日本語Tiếng ViệtAzərbaycan DiliՀայոց լեզուภาษาไทยTürk Diliქართველიবাংলাپښتوతెలుగుاردو한국어SrpskiБългарски